No | Part number | Description ( Function ) | Manufacturers | |
1 | FGA25N120ANTDTU | IGBT ( Insulated Gate Bipolar Transistor ) FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Coefficient • Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25°C • Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25°C • Extremely Enhanced Avalanche Capability Applications • Inducti |
Fairchild Semiconductor |
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Recommended search results related to FGA25N120ANTDTU |
Part No | Description ( Function) | Manufacturers | |
FGA25N120AN | IGBT FGA25N120AN IGBT FGA25N120AN General Description Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general |
Fairchild Semiconductor |
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FGA25N120AND | IGBT FGA25N120AND IGBT FGA25N120AND General Description Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduction and switching losses. The AND series offers an solution for application such as induction heating (IH), motor control, general purpose inverters |
Fairchild Semiconductor |
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FGA25N120ANTD | NPT Trench IGBT FGA25N120ANTD — 1200 V, 25 A NPT Trench IGBT November 2013 FGA25N120ANTD 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Coefficient • Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25C • Low Switching Loss: Eof |
Fairchild Semiconductor |
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FGA25N120ANTD_F109 | 25A NPT Trench IGBT FGA25N120ANTD/FGA25N120ANTD_F109 1200 V, 25 A NPT Trench IGBT April 2013 FGA25N120ANTD/FGA25N120ANTD_F109 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Coefficient • Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC |
Fairchild Semiconductor |
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FGA25N120FTD | Field Stop Trench IGBT FGA25N120FTD 1200 V, 25 A Field Stop Trench IGBT March 2013 FGA25N120FTD 1200 V, 25 A Field Stop Trench IGBT Features • Field Stop Trench Technology • High Speed Switching • Low Saturation Voltage: VCE(sat) = 1.6 V @ IC = 25 A • High Input Impedance • RoHS Complaint |
Fairchild Semiconductor |
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Vishay |
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