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FGA180N30D PDF Datasheet

The FGA180N30D is 300V Pdp Igbt. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 FGA180N30D
300V PDP IGBT

FGA180N30D 300V PDP IGBT June 2006 FGA180N30D 300V PDP IGBT Features • High Current Capability • Low saturation voltage: VCE(sat), Typ = 1.1 V@ IC = 40A • High Input Impedance Description Employing Unified IGBT Technology, FGA180N30D provides low conduction and switching loss. FGA180N30D offers the optimum solution for PDP applications where low co

Fairchild Semiconductor
Fairchild Semiconductor
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AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for global system for mobile communication (GSM),

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FGA180N33AT   180A PDP Trench IGBT

FGA180N33AT 330V, 180A PDP Trench IGBT April 2008 FGA180N33AT 330V, 180A PDP Trench IGBT Features • High Current Capability • Low saturation voltage: VCE(sat) =1.03V @ IC = 40A • High input impedance • RoHS compliant tm General Description Using Novel Trench IGBT Tech

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FGA180N33ATD — 330 V PDP Trench IGBT October 2013 FGA180N33ATD 330 V PDP Trench IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.68 V @ IC = 180 A • High Input Impedance • RoHS Complaint General Description Using novel trench IGBT Techno

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FVP18030IM3LSG1 Sustain March 2007 FVP18030IM3LSG1 Sustain Features • Use of high speed 300V IGBTs with parallel FRDs • Single-grounded power supply by means of built-in HVIC • Sufficient current driving capability for IGBTs due to adding a buffer • Isolation rating of

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MRF18030ALR3   RF Power Field Effect Transistors

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF18030A/D The RF MOSFET Line RF Power Field Effect Transistors MRF18030ALR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF18030ALSR3 Designed for GSM and EDGE base station applic

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