No | Part number | Description ( Function ) | Manufacturers | |
1 | FGA15S125P | IGBT ( Insulated Gate Bipolar Transistor ) FGA15S125P — 1250 V, 15 A Shorted-anode IGBT FGA15S125P 1250 V, 15 A Shorted-anode IGBT August 2013 Features • High Speed Switching • Low Saturation Voltage: VCE(sat) = 2.25 V @ IC = 15 A • High Input Impedance • RoHS Compliant Applications • Induction Heating, Microwave Oven General Description Using advanced field stop trench and shorted-anode technology, Fair |
Fairchild Semiconductor |
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1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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ON Semiconductor |
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