Datasheet FDS6814 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FDS6814	Dual N-Channel 2.5V Specified PowerTrench MOSFET FDS6814 July 1999 ADVANCE INFORMATION FDS6814 Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description These N-Channel 2.5V specified MOSFETs are produced using a rugged gate version of Fairchild's advanced PowerTrenchTM process. It has been optimized for power management application	Fairchild Semiconductor

FDS6 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FDS6690AS	30V N-Channel PowerTrench SyncFET FDS6690AS 30V N-Channel PowerTrench® SyncFET™ May 2008 FDS6690AS 30V N-Channel PowerTrench® SyncFET™ General Description The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximi	Fairchild Semiconductor
FDS6675BZ	P-Channel PowerTrench MOSFET FDS6675BZ P-Channel PowerTrench® MOSFET FDS6675BZ P-Channel PowerTrench® MOSFET -30V, -11A, 13mΩ March 2009 tm General Description Features This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored	Fairchild Semiconductor
FDS6900AS	Dual N-Ch PowerTrench SyncFET FDS6900AS May 2005 FDS6900AS General Description Dual N-Ch PowerTrench® SyncFET™ Features • Q2: Optimized to minimize conduction losses Includes SyncFET Schottky body diode RDS(on) = 22mΩ @ VGS = 10V RDS(on) = 28mΩ @ VGS = 4.5V • Q1: Optimized for low switching loss	Fairchild Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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