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FDS5692Z PDF Datasheet

The FDS5692Z is N-channel Ultrafet Trench MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 FDS5692Z
N-Channel UltraFET Trench MOSFET

FDS5692Z N-Channel UltraFET Trench® MOSFET February 2006 FDS5692Z N-Channel UltraFET Trench® MOSFET 50V, 5.8A, 24mΩ General Description Features This N-Channel UltraFET device has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge,

Fairchild Semiconductor
Fairchild Semiconductor
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GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N5681 TO 1N5709 PART NUMBER CAPACITANCE @ 4Vdc 1 MHz (pF) MIN QUALITY FACTOR @ 4Vdc F = 50 MHz CAPACITANCE RATIO 2V / 40V 4V / 60V MIN TYP MIN TYP MAX WORKING VOLTAGE (Vdc) MIN REVERSE BREAKDOWN VOLTAGE Ir = 10µA (Vdc) 1N5681 1N5682

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1N5692B   Diode VAR Cap Single 30V 56pF 2-Pin DO-7

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2SC5692   High-Speed Switching Applications DC-DC Converter Applications Strobe Applications

2SC5692 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5692 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • • • High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) Hi

Toshiba Semiconductor
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5962D9569201VEA   Radiation Hardened Single 8/Differential 4-Channel CMOS Analog Multiplexers

HS-0508RH, HS-0509RH Data Sheet August 1999 File Number 3977.2 Radiation Hardened Single 8/Differential 4-Channel CMOS Analog Multiplexers These radiation hardened monolithic CMOS multiplexers each include an array of eight analog switches, a digital decode circuit for channel s

Intersil Corporation
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