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Datasheet FDS4435 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | FDS4435 | P-Channel PowerTrench MOSFET FDS4435
October 2001
FDS4435
30V P-Channel PowerTrench® MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage rati |
 Fairchild Semiconductor |
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| 3 | FDS4435A | P-Channel Logic Level PowerTrenchMOSFET FDS4435A
October 2001
FDS4435A
P-Channel Logic Level PowerTrench® MOSFET
General Description
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate |
Fairchild Semiconductor |
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| 2 | FDS4435BZ | P-Channel PowerTrench MOSFET FDS4435BZ P-Channel PowerTrench® MOSFET
FDS4435BZ
P-Channel PowerTrench® MOSFET
-30V, -8.8A, 20m:
Features
Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A Extended VGSS range (-25V) for battery applications HBM ESD protection level of ±3.8KV |
Fairchild Semiconductor |
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| 1 | FDS4435BZ_F085 | P-Channel PowerTrench MOSFET FDS4435BZ_F085 P-Channel PowerTrench® MOSFET
FDS4435BZ_F085
P-Channel PowerTrench® MOSFET
-30V, -8.8A, 20m:
Features
Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A Extended VGSS range (-25V) for battery applications HBM ESD protection level |
Fairchild Semiconductor |
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