Datasheet FDS2572 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FDS2572	150V/ 0.047 Ohms/ 4.9A/ N-Channel UltraFET Trench MOSFET FDS2572 October 2001 FDS2572 150V, 0.047 Ohms, 4.9A, N-Channel UltraFET® Trench MOSFET General Description ® UltraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for Rds(on), low ESR, low total and Miller gate charge, these devices	Fairchild Semiconductor

FDS2 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FDS2070N3	150V N-Channel PowerTrench MOSFET FDS2070N3 May 2003 FDS2070N3 150V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optim	Fairchild Semiconductor
FDS2170N3	200V N-Channel PowerTrench MOSFET FDS2170N3 May 2003 FDS2170N3 200V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optim	Fairchild Semiconductor
FDS2582	N-Channel PowerTrench MOSFET 150V/ 4.1A/ 66m FDS2582 September 2002 FDS2582 N-Channel PowerTrench® MOSFET 150V, 4.1A, 66mΩ Features • r DS(ON) = 57mΩ (Typ.), VGS = 10V, ID = 4.1A • Qg(tot) = 19nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • Optimized efficiency at high frequencies • UIS Ca	Fairchild Semiconductor

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nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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