Datasheet FDR8321L Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FDR8321L	P-Channel MOSFET With Gate Driver For Load Switch Application August 2000 FDR8321L P-Channel MOSFET With Gate Driver For Load Switch Application General Description This device is designed for configuration as a load switch and is particularly suited for Power Management in portable battery powered electronic equipment. Designed to operate from 2.5V to 8V inp	Fairchild Semiconductor

FDR83 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FDR8308P	Dual P-Channel/ Logic Level/ PowerTrenchTM MOSFET November 1998 FDR8308P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product. These	Fairchild Semiconductor
FDR838P	P-Channel 2.5V Specified PowerTrenchTM MOSFET FDR838P March 1999 FDR838P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance an	Fairchild Semiconductor
FDR836P	P-Channel 2.5V Specified MOSFET FDR836P April 1999 FDR836P P-Channel 2.5V Specified MOSFET General Description SuperSOTTM -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially	Fairchild Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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