| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | FDP80N06 | N-Channel MOSFET FDP80N06 N-Channel MOSFET September 2007 UniFETTM FDP80N06 N-Channel MOSFET 60V, 80A, 10mΩ Features • RDS(on) = 8.5mΩ ( Typ.)@ VGS = 10V, ID = 40A • Low gate charge(Typ. 57nC) • Low Crss(Typ. 145pF) • Fast switching • Improved dv/dt capability • RoHS compliant tm Description These N-Channel enhancement mode power field effect transistors are produced using Fa |
 Fairchild Semiconductor |
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