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Datasheet FDP6676 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | FDP6676 | 30V N-Channel Logic Level PowerTrench MOSFET FDP6676/FDB6676
April 2001
FDP6676/FDB6676
30V N-Channel Logic Level PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been |  Fairchild Semiconductor | mosfet |
| 2 | FDP6676S | 30V N-Channel PowerTrench SyncFET FDP6676S/FDB6676S
October 2001
FDP6676S / FDB6676S
30V N-Channel PowerTrench SyncFET™
General Description
This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, pr | Fairchild Semiconductor | data |
FDP Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | FDP020N06B | N-Channel PowerTrench MOSFET FDP020N06B — N-Channel PowerTrench® MOSFET
FDP020N06B
N-Channel PowerTrench® MOSFET
60 V, 313 A, 2 mΩ
November 2013
Features
• RDS(on) = 1.65 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A • Low FOM RDS(on) * QG • Low Reverse-Recovery Charge, Qrr = 194 nC • Soft Reverse-Recovery Body Diode • Fairchild Semiconductor mosfet | | |
| 2 | FDP023N08B | MOSFET, Transistor FDP023N08B — N-Channel PowerTrench® MOSFET
FDP023N08B
N-Channel PowerTrench® MOSFET
75 V, 242 A, 2.35 mΩ
November 2013
Features
• RDS(on) = 1.96 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A • Low FOM RDS(on)*QG • Low Reverse Recovery Charge, Qrr • Soft Reverse Recovery Body Diode • Enables Fairchild Semiconductor mosfet | | |
| 3 | FDP025N06 | MOSFET, Transistor FDP025N06 — N-Channel PowerTrench® MOSFET
FDP025N06
N-Channel PowerTrench® MOSFET
60 V, 265 A, 2.5 mΩ
November 2013
Features
• RDS(on) = 1.9 mΩ (Typ.) @ VGS = 10 V, ID = 75 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low
RDS(on) • Fairchild Semiconductor mosfet | | |
| 4 | FDP027N08B | N-Channel PowerTrench MOSFET FDP027N08B — N-Channel PowerTrench® MOSFET
FDP027N08B
N-Channel PowerTrench® MOSFET
80 V, 223 A, 2.7 mΩ
November 2013
Features
• RDS(on) = 2.21 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A • Low FOM RDS(on) * QG • Low Reverse-Recovery Charge, Qrr = 112 nC • Soft Reverse-Recovery Body Diode � Fairchild Semiconductor mosfet | | |
| 5 | FDP030N06 | MOSFET, Transistor FDP030N06 — N-Channel PowerTrench® MOSFET
FDP030N06
N-Channel PowerTrench® MOSFET
60 V, 193 A, 3.2 mΩ
November 2013
Features
• RDS(on) = 2.6 mΩ (Typ.) @ VGS = 10 V, ID = 75 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low
RDS(on) • Fairchild Semiconductor mosfet | | |
| 6 | FDP030N06B_F102 | MOSFET, Transistor FDP030N06B_F102 — N-Channel PowerTrench® MOSFET
FDP030N06B_F102
N-Channel PowerTrench® MOSFET
60 V, 195 A, 3.1 mΩ
November 2013
Features
• RDS(on) = 2.67 mΩ (Typ.) @ VGS = 10 V, ID = 100 A • Low FOM RDS(on) * QG • Low Reverse-Recovery Charge, Qrr = 78 nC • Soft Reverse-Recovery Body Fairchild Semiconductor mosfet | | |
| 7 | FDP032N08 | MOSFET, Transistor FDP032N08 — N-Channel PowerTrench® MOSFET
FDP032N08
N-Channel PowerTrench® MOSFET
75 V, 235 A, 3.2 mΩ
November 2013
Features
• RDS(on) = 2.5 mΩ (Typ.) @ VGS = 10 V, ID = 75 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low
RDS(on) • Fairchild Semiconductor mosfet | |
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