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Datasheet FDN8601 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | FDN8601 | MOSFET ( Transistor ) FDN8601 N-Channel PowerTrench® MOSFET
FDN8601
N-Channel PowerTrench® MOSFET
100 V, 2.7 A, 109 m:
July 2010
Features
General Description
Max rDS(on) = 109 m: at VGS = 10 V, ID = 1.5 A Max rDS(on) = 175 m: at VGS = 6 V, ID = 1.2 A High performance trench technology for extremely low rD |
 Fairchild Semiconductor |
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| 1 | FDN8601 | N-Channel MOSFET SMD Type
Product specification
FDN8601
100 V, 2.7 A, 109 m: Features
Max rDS(on) = 109 m: at VGS = 10 V, ID = 1.5 A Max rDS(on) = 175 m: at VGS = 6 V, ID = 1.2 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used sur |
 TY Semiconductor |
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