No | Part number | Description ( Function ) | Manufacturers | |
1 | FDN357N | N-Channel Logic Level Enhancement Mode Field Effect Transistor March 1998 FDN357N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particula |
Fairchild Semiconductor |
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