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Datasheet FDN352AP Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | FDN352AP | PowerTrench MOSFET FDN352AP Single P-Channel, PowerTrench® MOSFET
August 2005
FDN352AP Single P-Channel, PowerTrench® MOSFET
Features
■ –1.3 A, –30V –1.1 A, –30V RDS(ON) = 180 mΩ @ VGS = –10V RDS(ON) = 300 mΩ @ VGS = –4.5V ■ High performance trench technology for extremely low RDS(ON). ■ High |
Fairchild Semiconductor |
FDN35 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
FDN357N | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
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FDN358 | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
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FDN359 | N-Channel Logic Level PowerTrenchTM MOSFET |
Fairchild Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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