| No | Part number | Description ( Function ) | Manufacturers | |
| 3 | FDMS8670 | N-Channel Power Trench MOSFET FDMS8670 N-Channel Power Trench® MOSFET May 2009 FDMS8670 N-Channel Power Trench® MOSFET 30V, 42A, 2.6m: tm Features General Description Max rDS(on) = 2.6m: at VGS = 10V, ID = 24A Max rDS(on) = 3.8m: at VGS = 4.5V, ID = 18A 100% UIL Tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor's latest proprietary Power Trench® pro |
 Fairchild Semiconductor |
|
| 2 | FDMS8670AS | N-Channel MOSFET FDMS8670AS N-Channel PowerTrench® SyncFETTM April 2008 FDMS8670AS N-Channel PowerTrench® SyncFETTM 30V, 42A, 3.0mΩ tm Features General Description Max rDS(on) = 3.0mΩ at VGS = 10V, ID = 23A Max rDS(on) = 4.7mΩ at VGS = 4.5V, ID = 18A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust |
Fairchild Semiconductor |
|
| 1 | FDMS8670S | N-Channel PowerTrench SyncFETTM FDMS8670S N-Channel PowerTrench® SyncFETTM December 2006 FDMS8670S N-Channel PowerTrench® SyncFETTM 30V, 42A, 3.5mΩ Features General Description Max rDS(on) = 3.5mΩ at VGS = 10V, ID = 20A Max rDS(on) = 5.0mΩ at VGS = 4.5V, ID = 17A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode |
Fairchild Semiconductor |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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