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FDMS86310 PDF Datasheet

The FDMS86310 is N-channel MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 FDMS86310
N-Channel MOSFET

FDMS86310 N-Channel PowerTrench® MOSFET FDMS86310 January 2012 N-Channel PowerTrench® MOSFET 80 V, 50 A, 4.8 mΩ Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized f

Fairchild Semiconductor
Fairchild Semiconductor
pdf

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5962F9863101V9A   Radiation Hardened 8-Input NAND Gate

ACS30MS Data Sheet July 1999 File Number 4759 Radiation Hardened 8-Input NAND Gate The Radiation Hardened ACS30MS is an 8-Input NAND Gate. A HIGH level on all inputs results in a LOW level on the Y output. A LOW level on any input results in a HIGH level on the Y output. All inp

Intersil Corporation
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5962F9863101VCC   Radiation Hardened 8-Input NAND Gate

ACS30MS Data Sheet July 1999 File Number 4759 Radiation Hardened 8-Input NAND Gate The Radiation Hardened ACS30MS is an 8-Input NAND Gate. A HIGH level on all inputs results in a LOW level on the Y output. A LOW level on any input results in a HIGH level on the Y output. All inp

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5962F9863101VXC   Radiation Hardened 8-Input NAND Gate

ACS30MS Data Sheet July 1999 File Number 4759 Radiation Hardened 8-Input NAND Gate The Radiation Hardened ACS30MS is an 8-Input NAND Gate. A HIGH level on all inputs results in a LOW level on the Y output. A LOW level on any input results in a HIGH level on the Y output. All inp

Intersil Corporation
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FDMS86300   N-Channel MOSFET

FDMS86300 N-Channel PowerTrench® MOSFET FDMS86300 N-Channel PowerTrench® MOSFET 80 V, 42 A, 3.9 mΩ Features General Description „ Max rDS(on) = 3.9 mΩ at VGS = 10 V, ID = 19 A „ Max rDS(on) = 5.5 mΩ at VGS = 8 V, ID = 15.5 A „ Advanced Package and Silicon combination for

Fairchild Semiconductor
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FDMS86300DC   N-Channel MOSFET

FDMS86300DC N-Channel Dual CoolTM Power Trench® MOSFET March 2012 FDMS86300DC N-Channel Dual CoolTM Power Trench® MOSFET 80 V, 60 A, 3.1 mΩ Features „ Dual CoolTM Top Side Cooling PQFN package „ Max rDS(on) = 3.1 mΩ at VGS = 10 V, ID = 24 A „ Max rDS(on) = 4.0 mΩ at VGS

Fairchild Semiconductor
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