Datasheet FDMS86101A Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FDMS86101A	N-Channel MOSFET FDMS86101A N-Channel PowerTrench® MOSFET April 2012 FDMS86101A N-Channel PowerTrench® MOSFET 100 V, 60 A, 8 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-s	Fairchild Semiconductor

FDMS861 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FDMS86150ET100	MOSFET ( Transistor ) FDMS86150ET100 N-Channel Shielded Gate PowerTrench® MOSFET FDMS86150ET100 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 128 A, 4.85 mΩ January 2015 Features Extended TJ rating to 175°C Shielded Gate MOSFET Technology Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID	Fairchild Semiconductor
FDMS86101DC	N-Channel MOSFET FDMS86101DC N-Channel Dual CoolTM Power Trench® MOSFET February 2012 FDMS86101DC N-Channel Dual CoolTM Power Trench® MOSFET 100 V, 60 A, 7.5 mΩ Features Dual CoolTM Top Side Cooling PQFN package Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 14.5 A Max rDS(on) = 12 mΩ a	Fairchild Semiconductor
FDMS86150	N-Channel MOSFET FDMS86150 N-Channel PowerTrench® MOSFET October 2012 FDMS86150 N-Channel PowerTrench® MOSFET 100 V, 60 A, 4.85 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailor	Fairchild Semiconductor

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nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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