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Datasheet FDMS7560S Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | FDMS7560S | N-Channel PowerTrench SyncFET FDMS7560S N-Channel PowerTrench® SyncFETTM
August 2011
FDMS7560S
N-Channel PowerTrench® SyncFETTM
25 V, 49 A, 1.45 mΩ Features General Description
The FDMS7560S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been | Fairchild Semiconductor | data |
FDM Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | FDM-2B | FDM-2B w
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ETC data | | |
2 | FDM100-0045SP | Buck Chopper FDM 100-0045SP
Buck Chopper with Trench Power MOSFET and Schottky Diode
in ISOPLUS i4-PACTM
Preliminary data
3 5 4
ID25 = 100 A = 55 V VDSS RDSon typ. = 5.7 mΩ
1
2
5
MOSFET Symbol VDSS VGS ID25 ID90 TC = 25°C TC = 90°C Conditions TVJ = 25°C to 150°C Maximum Ratings 55 ±20 100 80 V V A A
IXYS Corporation data | | |
3 | FDM21-05QC | Q-Class Power MOSFETs
FMD 21-05QC FDM 21-05QC
Q-Class Power MOSFETs
Chopper Topologies in ISOPLUS i4-PACTM
FMD
3 3 5 4 1 2 2 4
ID25 = 21 A = 500 V VDSS RDSon typ. = 190 mΩ
FDM
Preliminary data
1 5
MOSFET Symbol VDSS VGS ID25 ID90 TC = 25°C TC = 90°C Conditions TVJ = 25°C to 150°C Maximum R IXYS Corporation mosfet | | |
4 | FDM2452NZ | Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET FDM2452NZ
July 2005
FDM2452NZ
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET
General Description
This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v on special MicroFET lead frame w Fairchild Semiconductor mosfet | | |
5 | FDM3300NZ | Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET FDM3300NZ
February 2003
FDM3300NZ
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET
General Description
This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v on special MicroFET lead f Fairchild Semiconductor mosfet | | |
6 | FDM3622 | N-Channel PowerTrench MOSFET FDM3622 N-Channel PowerTrench® MOSFET
January 2005
FDM3622 N-Channel PowerTrench® MOSFET
100V, 4.4A, 60mΩ Features
r DS(ON) = 44mΩ (Typ.), VGS = 10V, ID = 4.4A Qg(tot) = 13nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode Optimized efficiency at high frequencies UIS Capability (Singl Fairchild Semiconductor mosfet | | |
7 | FDM606P | P-Channel 1.8V Logic Level Power Trench MOSFET FDM606P
July 2002
FDM606P
P-Channel 1.8V Logic Level Power Trench® MOSFET
General Description
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for Fairchild Semiconductor mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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