No | Part number | Description ( Function ) | Manufacturers | |
1 | FDMS3668S | MOSFET ( Transistor ) FDMS3668S PowerTrench® Power Stage FDMS3668S PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel Max rDS(on) = 5 mΩ at VGS = 10 V, ID = 18 A Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17 A Low inductance packaging shortens ris |
Fairchild Semiconductor |
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Recommended search results related to FDMS3668S |
Part No | Description ( Function) | Manufacturers | |
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American Microsemiconductor |
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General Semiconductor |
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2N3668 | (2N3668 - 2N3670) SILICON CONTROLLED RECTIFIER 16AMPS 220 THRU 800 VOLTS JEDEC TO-3 CASE 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 ww w.D a taS hee t4U .co m |
Central Semiconductor |
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2N3668 | SILICON CONTROLLED RECTFIERS 2N3668-2N3670, 2N4103 High-reliability discrete products and engineering services since 1977 SILICON CONTROLLED RECTFIERS FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as no |
Digitron Semiconductors |
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2SC3668 | Silicon NPN Epitaxial Type TRANSISTOR TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3668 Power Amplifier Applications Power Switching Applications 2SC3668 Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 1000 mW • High-speed switch |
Toshiba Semiconductor |
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