FDMC8878 PDF Datasheet

FDMC8878 N-Channel Power Trench® MOSFET February 2007 FDMC8878 N-Channel Power Trench® MOSFET 30V, 16.5A, 14mΩ Features General Description „ Max rDS(on) = 14mΩ at VGS = 10V, ID = 9.6A „ Max rDS(on) = 17mΩ at VGS = 4.5V, ID = 8.7A „ Low Profile - 1mm max in Power 33 „ RoHS Compliant tm This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s

AMC DOC. #:AMC8878_D (LF) March 2004  ADD MICROTECH CORP. DESCRIPTION AMC8878/8879 LOW NOISE 150mA LOW DROPOUT REGULATOR FEATURES The AMC8878/8879 series is a low noise, low dropout linear regulator operating from 2.5V to 6.5V input. An external capacit

Output Coupling Capacitor-less Line Amplifier BD8876FV, BD8878FV Description BD8876FV, BD8878FV are output coupling capacitor-less line amplifiers. These IC have a negative voltage generator built-in and generate the negative voltage from the supply voltage. It is possible to dr

********** TRIPLE DIGITAL MIX EFFECT -TOP VIEW- CXD8878Q(1/3) IL08 80 70 60 V DD (+5V) V DD (+5V) GND 51 81 50 90 GND GND 40 VDD (+5V) VDD (+5V) GND 100 31 1 10 20 30 (V DD=+5V) PIN I/O No. I 1 I 2 3 I 4 I 5 I 6 I 7 I 8 I 9 I 10 O 11 O 12

FDC8878 N-Channel PowerTrench® MOSFET FDC8878 N-Channel PowerTrench® MOSFET 30 V, 8.0 A, 16 mΩ Features General Description January 2012 „ Max rDS(on) = 16 mΩ at VGS = 10 V, ID = 8.0 A „ Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 7.5 A „ High performance trench technolog

FDD8878 / FDU8878 N-Channel PowerTrench® MOSFET January 2005 FDD8878 / FDU8878 N-Channel PowerTrench® MOSFET 30V, 40A, 15mΩ Features r DS(ON) = 15mΩ, VGS = 10V, ID = 35A r DS(ON) = 18.5mΩ, VGS = 4.5V, ID = 35A High performance trench technology for extremely low r DS(ON