FDMC8854 PDF Datasheet

FDMC8854 N-Channel PowerTrench® MOSFET February 2007 FDMC8854 N-Channel Power Trench® MOSFET 30V, 15A, 5.7mΩ Features General Description „ Max rDS(on) = 5.7mΩ at VGS = 10V, ID = 15A „ Max rDS(on) = 7.6mΩ at VGS = 4.5V, ID = 13A „ Low Profile - 1mm max in Power 33 „ RoHS Compliant tm This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s a

FDMC8878 N-Channel Power Trench® MOSFET February 2007 FDMC8878 N-Channel Power Trench® MOSFET 30V, 16.5A, 14mΩ Features General Description „ Max rDS(on) = 14mΩ at VGS = 10V, ID = 9.6A „ Max rDS(on) = 17mΩ at VGS = 4.5V, ID = 8.7A „ Low Profile - 1mm max in Power 33

FDMC8882 N-Channel Power Trench® MOSFET FDMC8882 N-Channel Power Trench® MOSFET 30 V, 16 A, 14.3 m: May 2014 Features General Description „ Max rDS(on) = 14.3 m: at VGS = 10 V, ID = 10.5 A „ Max rDS(on) = 22.5 m: at VGS = 4.5 V, ID = 8.3 A „ High performance technology

FDMC8884 N-Channel Power Trench® MOSFET April 2012 FDMC8884 N-Channel Power Trench® MOSFET 30 V, 15 A, 19 mΩ Features „ Max rDS(on) = 19 mΩ at VGS = 10 V, ID = 9.0 A „ Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 7.2 A „ High performance technology for extremely low rDS(on)

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