Datasheet FDMC6675BZ Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FDMC6675BZ	N-Channel MOSFET FDMC6675BZ P-Channel PowerTrench® MOSFET FDMC6675BZ P-Channel Power Trench® MOSFET -30 V, -20 A, 14.4 mΩ Features Max rDS(on) = 14.4 mΩ at VGS = -10 V, ID = -9.5 A Max rDS(on) = 27.0 mΩ at VGS = -4.5 V, ID = -6.9 A HBM ESD protection level of 8 kV typical(note 3) Extended VGSS r	Fairchild Semiconductor

FDMC667 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FDMC6675BZ	N-Channel MOSFET FDMC6675BZ P-Channel PowerTrench® MOSFET FDMC6675BZ P-Channel Power Trench® MOSFET -30 V, -20 A, 14.4 mΩ Features Max rDS(on) = 14.4 mΩ at VGS = -10 V, ID = -9.5 A Max rDS(on) = 27.0 mΩ at VGS = -4.5 V, ID = -6.9 A HBM ESD protection level of 8 kV typical(note 3	Fairchild Semiconductor
FDMC6679AZ	N-Channel MOSFET FDMC6679AZ P-Channel PowerTrench® MOSFET July 2009 FDMC6679AZ P-Channel PowerTrench® MOSFET -30 V, -20 A, 10 mΩ Features General Description The FDMC6679AZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologie	Fairchild Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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