Datasheet FDM606P Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FDM606P	P-Channel 1.8V Logic Level Power Trench MOSFET FDM606P July 2002 FDM606P P-Channel 1.8V Logic Level Power Trench® MOSFET General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for	Fairchild Semiconductor

FDM6 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FDM6296	Single N-Channel / Logic-Level / PowerTrench MOSFET FDM6296 Single N-Channel, Logic-Level, PowerTrench® MOSFET December 2004 FDM6296 Single N-Channel, Logic-Level, PowerTrench® MOSFET Features ■ 11.5 A, 30 V RDS(ON) = 10.5 mΩ @ VGS = 10 V RDS(ON) = 15 mΩ @ VGS = 4.5 V ■ Low Qg, Qgd and Rg for efﬁcient switching perfo	Fairchild Semiconductor
FDM606P	P-Channel 1.8V Logic Level Power Trench MOSFET FDM606P July 2002 FDM606P P-Channel 1.8V Logic Level Power Trench® MOSFET General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain	Fairchild Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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