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FDG6308P PDF Datasheet

The FDG6308P is P-channel 1.8v Specified Powertrench MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 FDG6308P
P-Channel 1.8V Specified PowerTrench MOSFET

FDG6308P October 2000 PRELIMINARY FDG6308P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –0.6 A, –20 V. RDS(ON) = 0.40 Ω @ VGS = –4.5 V RDS(ON) = 0.55 Ω @ VGS = –2.5 V

Fairchild Semiconductor
Fairchild Semiconductor
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Recommended search results related to FDG6308P

Part No Description ( Function) Manufacturers PDF
FDG6308   P-Channel 1.8V Specified PowerTrench MOSFET

FDG6308P October 2000 PRELIMINARY FDG6308P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Feat

Fairchild Semiconductor
Fairchild Semiconductor
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2N6308   NPN POWER SILICON TRANSISTOR

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/498 Devices 2N6306 2N6308 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation

Microsemi Corporation
Microsemi Corporation
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2N6308   NPN SILICON TRANSISTOR

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

Central Semiconductor Corp
Central Semiconductor Corp
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2N6308   Silicon Power Transistors

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High breakdown voltage ·High power dissipation APPLICATIONS ·Designed for high voltage inverters, switching regulators,line operated amplifiers, an

SavantIC
SavantIC
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2N6308   Trans GP BJT NPN 350V 8A 3-Pin(2+Tab) TO-3

New Jersey Semiconductor
New Jersey Semiconductor
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