No | Part number | Description ( Function ) | Manufacturers | |
1 | FDG6308P | P-Channel 1.8V Specified PowerTrench MOSFET FDG6308P October 2000 PRELIMINARY FDG6308P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –0.6 A, –20 V. RDS(ON) = 0.40 Ω @ VGS = –4.5 V RDS(ON) = 0.55 Ω @ VGS = –2.5 V |
Fairchild Semiconductor |
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Recommended search results related to FDG6308P |
Part No | Description ( Function) | Manufacturers | |
FDG6308 | P-Channel 1.8V Specified PowerTrench MOSFET FDG6308P October 2000 PRELIMINARY FDG6308P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Feat |
Fairchild Semiconductor |
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2N6308 | NPN POWER SILICON TRANSISTOR TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/498 Devices 2N6306 2N6308 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation |
Microsemi Corporation |
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2N6308 | NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 |
Central Semiconductor Corp |
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2N6308 | Silicon Power Transistors SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High breakdown voltage ·High power dissipation APPLICATIONS ·Designed for high voltage inverters, switching regulators,line operated amplifiers, an |
SavantIC |
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2N6308 | Trans GP BJT NPN 350V 8A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
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Vishay |
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ON Semiconductor |
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