No | Part number | Description ( Function ) | Manufacturers | |
1 | FDFMA2P857 | Integrated P-Channel PowerTrench MOSFET and Schottky Diode FDFMA2P857 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode February 2007 FDFMA2P857 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode –20V, –3.0A, 120mΩ Features MOSFET: Max rDS(on) = 120mΩ at VGS = –4.5V, ID = –3.0A Max rDS(on) = 160mΩ at VGS = –2.5V, ID = –2.5A Max rDS(on) = 240mΩ at VGS = –1.8V, ID = –1.0A General Desc |
Fairchild Semiconductor |
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