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Datasheet FDFMA2P853T Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | FDFMA2P853T | Integrated P-Channel PowerTrench MOSFET FDFMA2P853T Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
December 2008
FDFMA2P853T
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
www.datasheet4u.com
tm
–20 V, –3.0 A, 120 mΩ Features
MOSFET:
Max rDS(on) = 120 mΩ at VGS = –4.5 V, ID = –3.0 A Max rD |  Fairchild Semiconductor | mosfet |
FDF Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | FDF5680 | 60V N-Channel PowerTrench MOSFET FDP5680/FDB5680
July 2000
FDP5680/FDB5680
General Description
60V N-Channel PowerTrenchTM MOSFET
Features
40 A, 60 V. RDS(ON) = 0.020 Ω @ VGS = 10 V RDS(ON) = 0.023 Ω @ VGS = 6 V. Critical DC electrical parameters specified at evevated temperature. Rugged internal source-drain diode Fairchild Semiconductor mosfet | | |
| 2 | FDF60BA50 | (FDF60BA50/60) DIODE MODULE F.R.D DIODE MODULE
F.R.D.
FDF60BA50/60
UL;E76102 M Power Diode Module FDF60BA is designed for single phase full wave rectification, which has four fast recovery diodes connected in a single phase bridge configuration. FDF60BA is suitable for high frequency application requiring low loss and high speed c  SanRex Corporation diode | | |
| 3 | FDF60BA60 | (FDF60BA50/60) DIODE MODULE F.R.D DIODE MODULE
F.R.D.
FDF60BA50/60
UL;E76102 M Power Diode Module FDF60BA is designed for single phase full wave rectification, which has four fast recovery diodes connected in a single phase bridge configuration. FDF60BA is suitable for high frequency application requiring low loss and high speed c SanRex Corporation diode | | |
| 4 | FDFC2P100 | Integrated P-Channel PowerTrench MOSFET and Schottky Diode FDFC2P100 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
October 2006
FDFC2P100
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
-20V, -3A, 150mΩ Features
Max rDS(on) = 150mΩ at VGS = -4.5V, ID = -3.0A Max rDS(on) = 200mΩ at VGS = -2.5V, ID = -2.2A Low Gat Fairchild Semiconductor mosfet | | |
| 5 | FDFC3N108 | N-Channel 1.8V Specified PowerTrench MOSFET with Schottky Diode FDFC3N108
January 2004
FDFC3N108
N-Channel 1.8V Specified PowerTrench® MOSFET with Schottky Diode
General Description
This N-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It is combined with a low forward drop Schottky that is isolated from the MOSFET, Fairchild Semiconductor mosfet | | |
| 6 | FDFM2N111 | Integrated N-Channel PowerTrench MOSFET and Schottky Diode
FDFM2N111 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
August 2005
FDFM2N111
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
General Description
FDFM2N111 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very Fairchild Semiconductor mosfet | | |
| 7 | FDFM2P110 | Integrated P-Channel PowerTrench MOSFET and Schottky Diode
FDFM2P110 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
April 2005
FDFM2P110 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
Features
■ –3.5 A, –20 V RDS(ON) = 140 mΩ @ VGS = –4.5 V RDS(ON) = 200 mΩ @ VGS = –2.5 V ■ Low Profile – Fairchild Semiconductor mosfet | |
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