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Datasheet FDFMA2P853 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
2 FDFMA2P853   Integrated P-Channel PowerTrench MOSFET and Schottky Diode

FDFMA2P853 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode August 2005 FDFMA2P853 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode General Description This device is designed specifically as a single package solution for the battery charge switch in ce
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDFMA2P853 pdf
1 FDFMA2P853T   Integrated P-Channel PowerTrench MOSFET

FDFMA2P853T Integrated P-Channel PowerTrench® MOSFET and Schottky Diode December 2008 FDFMA2P853T Integrated P-Channel PowerTrench® MOSFET and Schottky Diode tm –20 V, –3.0 A, 120 mΩ Features MOSFET: „ Max rDS(on) = 120 mΩ at VGS = –4.5 V, ID = –3.0 A „ Max rD
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDFMA2P853T pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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