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Datasheet FDFMA2P853 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | FDFMA2P853 | Integrated P-Channel PowerTrench MOSFET and Schottky Diode
FDFMA2P853 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
August 2005
FDFMA2P853
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
General Description
This device is designed specifically as a single package solution for the battery charge switch in ce |
Fairchild Semiconductor |
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1 | FDFMA2P853T | Integrated P-Channel PowerTrench MOSFET FDFMA2P853T Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
December 2008
FDFMA2P853T
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
tm
–20 V, –3.0 A, 120 mΩ Features
MOSFET:
Max rDS(on) = 120 mΩ at VGS = –4.5 V, ID = –3.0 A Max rD |
Fairchild Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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