| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | FDD86252 | MOSFET ( Transistor ) FDD86252 N-Channel PowerTrench® MOSFET FDD86252 N-Channel PowerTrench® MOSFET 150 V, 27 A, 52 m: September 2011 Features General Description Max rDS(on) = 52 m: at VGS = 10 V, ID = 5 A Max rDS(on) = 72 m: at VGS = 6 V, ID = 4 A 100% UIL tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been espec |
 Fairchild Semiconductor |
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| Part No | Description ( Function) | Manufacturers | |
| FDD86250 | MOSFET ( Transistor ) FDD86250 N-Channel Shielded Gate PowerTrench® MOSFET FDD86250 N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 50 A, 22 mΩ Features General Description May 2013 Shielded Gate MOSFET Technology Max rDS(on) = 22 mΩ at VGS = 10 V, ID = 8 A Max rDS(on) = 31 mΩ |
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| FDMS86252 | N-Channel MOSFET FDMS86252 N-Channel PowerTrench® MOSFET August 2010 FDMS86252 N-Channel PowerTrench® MOSFET 150 V, 16 A, 51 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored t |
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| FDS86252 | MOSFET ( Transistor ) FDS86252 N-Channel Power Trench® MOSFET April 2011 FDS86252 N-Channel Power Trench® MOSFET 150 V, 4.5 A, 55 mΩ Features General Description Max rDS(on) = 55 mΩ at VGS = 10 V, ID = 4.5 A Max rDS(on) = 80 mΩ at VGS = 6 V, ID = 3.7 A High performance trench techno |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
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| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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