No | Part number | Description ( Function ) | Manufacturers | |
1 | FDD86102LZ | MOSFET ( Transistor ) FDD86102LZ N-Channel PowerTrench® MOSFET FDD86102LZ N-Channel PowerTrench® MOSFET 100 V, 35 A, 22.5 mΩ Features General Description August 2012 Max rDS(on) = 22.5 mΩ at VGS = 10 V, ID = 8 A Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 7 A HBM ESD protection level > 6 kV typical (Note 4) Very low Qg and Qgd compared to competing trench technologies Fast sw |
Fairchild Semiconductor |
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Recommended search results related to FDD86102LZ |
Part No | Description ( Function) | Manufacturers | |
FDD86102 | MOSFET ( Transistor ) FDD86102 N-Channel PowerTrench® MOSFET FDD86102 N-Channel PowerTrench® MOSFET 100 V, 36 A, 24 mΩ Features General Description March 2012 Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 8 A Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 6 A High performance trench technology |
Fairchild Semiconductor |
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FDB86102LZ | MOSFET ( Transistor ) FDB86102LZ N-Channel PowerTrench® MOSFET FDB86102LZ N-Channel PowerTrench® MOSFET 100 V, 30 A, 24 mΩ May 2011 Features General Description Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 8.3 A Max rDS(on) = 35 mΩ at VGS = 4.5 V, ID = 6.8 A HBM ESD protection level > 6 |
Fairchild Semiconductor |
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FDMC86102 | N-Channel Power Trench MOSFET FDMC86102 N-Channel Power Trench® MOSFET March 2012 FDMC86102 N-Channel Power Trench® MOSFET 100 V, 20 A, 24 mΩ Features Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 5 A Low Profile - 1 mm max in Power 33 100% UIL Tested |
Fairchild Semiconductor |
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FDMC86102L | MOSFET ( Transistor ) FDMC86102L N-Channel Shielded Gate PowerTrench® MOSFET FDMC86102L N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 18 A, 23 mΩ June 2014 Features General Description Shielded Gate MOSFET Technology Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 34 m |
Fairchild Semiconductor |
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FDMC86102LZ | N-Channel Power Trench MOSFET FDMC86102LZ N-Channel Power Trench® MOSFET April 2011 FDMC86102LZ N-Channel Power Trench® MOSFET 100 V, 22 A, 24 mΩ Features Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 6.5 A Max rDS(on) = 35 mΩ at VGS = 4.5 V, ID = 5.5 A HBM ESD protection level > 6 KV typical (Note |
Fairchild Semiconductor |
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Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |