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FDD86102LZ PDF Datasheet

The FDD86102LZ is MOSFET ( Transistor ). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 FDD86102LZ
MOSFET ( Transistor )

FDD86102LZ N-Channel PowerTrench® MOSFET FDD86102LZ N-Channel PowerTrench® MOSFET 100 V, 35 A, 22.5 mΩ Features General Description August 2012 „ Max rDS(on) = 22.5 mΩ at VGS = 10 V, ID = 8 A „ Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 7 A „ HBM ESD protection level > 6 kV typical (Note 4) „ Very low Qg and Qgd compared to competing trench technologies „ Fast sw

Fairchild Semiconductor
Fairchild Semiconductor
pdf

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Recommended search results related to FDD86102LZ

Part No Description ( Function) Manufacturers PDF
FDD86102   MOSFET ( Transistor )

FDD86102 N-Channel PowerTrench® MOSFET FDD86102 N-Channel PowerTrench® MOSFET 100 V, 36 A, 24 mΩ Features General Description March 2012 „ Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 8 A „ Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 6 A „ High performance trench technology

Fairchild Semiconductor
Fairchild Semiconductor
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FDB86102LZ   MOSFET ( Transistor )

FDB86102LZ N-Channel PowerTrench® MOSFET FDB86102LZ N-Channel PowerTrench® MOSFET 100 V, 30 A, 24 mΩ May 2011 Features General Description „ Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 8.3 A „ Max rDS(on) = 35 mΩ at VGS = 4.5 V, ID = 6.8 A „ HBM ESD protection level > 6

Fairchild Semiconductor
Fairchild Semiconductor
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FDMC86102   N-Channel Power Trench MOSFET

FDMC86102 N-Channel Power Trench® MOSFET March 2012 FDMC86102 N-Channel Power Trench® MOSFET 100 V, 20 A, 24 mΩ Features „ Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 7 A „ Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 5 A „ Low Profile - 1 mm max in Power 33 „ 100% UIL Tested „

Fairchild Semiconductor
Fairchild Semiconductor
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FDMC86102L   MOSFET ( Transistor )

FDMC86102L N-Channel Shielded Gate PowerTrench® MOSFET FDMC86102L N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 18 A, 23 mΩ June 2014 Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A „ Max rDS(on) = 34 m

Fairchild Semiconductor
Fairchild Semiconductor
datasheet pdf
FDMC86102LZ   N-Channel Power Trench MOSFET

FDMC86102LZ N-Channel Power Trench® MOSFET April 2011 FDMC86102LZ N-Channel Power Trench® MOSFET 100 V, 22 A, 24 mΩ Features „ Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 6.5 A „ Max rDS(on) = 35 mΩ at VGS = 4.5 V, ID = 5.5 A „ HBM ESD protection level > 6 KV typical (Note

Fairchild Semiconductor
Fairchild Semiconductor
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[1]    

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