|
|
Datasheet FDD6N50 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | FDD6N50 | N-Channel MOSFET FDD6N50 / FDU6N50 — N-Channel UniFETTM MOSFET
FDD6N50 / FDU6N50
N-Channel UniFETTM MOSFET
500 V, 6 A, 900 mΩ
Features
• RDS(on) = 900 mΩ (Max.) @ VGS = 10 V, ID = 3 A • Low Gate Charge (Typ. 12.8 nC) • Low Crss (Typ. 9 pF) • 100% Avalanche Tested • Improved dv/dt Capability
Applicatio |
Fairchild Semiconductor |
|
2 | FDD6N50F | MOSFET ( Transistor ) FDD6N50F — N-Channel UniFETTM FRFET® MOSFET
FDD6N50F
N-Channel UniFETTM FRFET® MOSFET
500 V, 5.5 A, 1.15 Ω
November 2013
Features
• RDS(on) = 950 mΩ (Typ.) @ VGS = 10 V, ID = 2.75 A • Low Gate Charge (Typ. 15nC) • Low Crss (Typ. 6.3pF) • 100% Avalanche Tested • Improved dv/dt Capa |
Fairchild Semiconductor |
|
1 | FDD6N50TM_F085 | 500V N-Channel MOSFET FDD6N50TM_F085 500V N-Channel MOSFET
FDD6N50TM_F085
500V N-Channel MOSFET
Features
• 6A, 500V, RDS(on) = 0.9Ω @VGS = 10 V • Low gate charge ( typical 12.8 nC) • Low Crss ( typical 9 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Qualified to AEC Q101 • |
Fairchild Semiconductor |
Esta página es del resultado de búsqueda del FDD6N50. Si pulsa el resultado de búsqueda de FDD6N50 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |