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FDD6782A PDF Datasheet

The FDD6782A is N-channel MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 FDD6782A
N-Channel MOSFET

FDD6782A N-Channel Power Trench® MOSFET January 2009 FDD6782A N-Channel PowerTrench® MOSFET 25 V, 10.5 mΩ Features „ Max rDS(on) = 10.5 mΩ at VGS = 10 V, ID = 14.9 A „ Max rDS(on) = 24.0 mΩ at VGS = 4.5 V, ID = 11.0 A „ 100% UIL test „ RoHS Compliant General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/D

Fairchild Semiconductor
Fairchild Semiconductor
pdf

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Recommended search results related to FDD6782A

Part No Description ( Function) Manufacturers PDF
2N6782   N-CHANNEL POWER MOSFET

2N6782 MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) N–CHANNEL POWER MOSFET 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. APPLICATIONS • FAST SWITCHING • MOTOR CONTROLS 5.08

Seme LAB
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2N6782   Trans MOSFET N-CH 100V 3.5A 3-Pin TO-39

New Jersey Semiconductor
New Jersey Semiconductor
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2N6782LCC4   N-CHANNEL POWER MOSFET

2N6782LCC4 MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET ≈ 2.16 (0.085) 1.27 (0.050) 1.07 (0.040) 9.14 (0.360) 8.64 (0.340) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 11 7.62 (0.300) 7.12 (0.280) 17 18 1 2 0.76 (0.030) 0.51 (0.020) 10 9 8 VDSS ID(con

Seme LAB
Seme LAB
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AON6782   N-Channel MOSFET

AON6782 30V N-Channel MOSFET SRFET General Description SRFETTM AON6782 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and

Alpha & Omega Semiconductors
Alpha & Omega Semiconductors
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FDD6780   N-Channel Power Trench MOSFET

FDD6780 N-Channel PowerTrench® MOSFET FDD6780 N-Channel PowerTrench® MOSFET 25 V, 30 A, 8.5 mΩ Features General Description June 2009 „ Max rDS(on) = 8.5 mΩ at VGS = 10 V, ID = 16.5 A „ Max rDS(on) = 12.5 mΩ at VGS = 4.5 V, ID = 13.0 A „ 100% UIL test „ RoHS Com

Fairchild Semiconductor
Fairchild Semiconductor
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