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FDD6680A PDF Datasheet

The FDD6680A is N-channel/ LogIC Level/ Powertrench MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 FDD6680A
N-Channel/ Logic Level/ PowerTrench MOSFET

FDD6680A February 2000 FDD6680A N-Channel, Logic Level, PowerTrench MOSFET General Description This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • • • 56 A, 30 V.

Fairchild Semiconductor
Fairchild Semiconductor
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FDD6680   N-Channel Logic Level PWM Optimized PowerTrench MOSFET

FDD6680/FDU6680 November 2004 FDD6680 / FDU6680 30V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet

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FDD6680   30V N-Channel PowerTrench MOSFET

FDD6680/FDU6680 November 2004 FDD6680 / FDU6680 30V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet

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FDD6680   30V N-Channel PowerTrench MOSFET

FDD6680/FDU6680 November 2004 FDD6680 / FDU6680 30V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet

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FDD6680S   30V N-Channel PowerTrench SyncFET

FDD6680S December 2000 FDD6680S 30V N-Channel PowerTrench SyncFET™ General Description The FDD6680S is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing

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[1]    

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