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FDC8878 PDF Datasheet

The FDC8878 is N-channel Powertrench MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 FDC8878
N-Channel PowerTrench MOSFET

FDC8878 N-Channel PowerTrench® MOSFET FDC8878 N-Channel PowerTrench® MOSFET 30 V, 8.0 A, 16 mΩ Features General Description January 2012 „ Max rDS(on) = 16 mΩ at VGS = 10 V, ID = 8.0 A „ Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 7.5 A „ High performance trench technology for extremely low rDS(on) „ Fast switching speed „ RoHS Compliant This N-Channel MOSFET is prod

Fairchild Semiconductor
Fairchild Semiconductor
pdf

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AMC8878   (AMC8878 / AMC8879) LOW NOISE 150mA LOW DROPOUT REGULATOR

AMC DOC. #:AMC8878_D (LF) March 2004  ADD MICROTECH CORP. DESCRIPTION AMC8878/8879 LOW NOISE 150mA LOW DROPOUT REGULATOR FEATURES The AMC8878/8879 series is a low noise, low dropout linear regulator operating from 2.5V to 6.5V input. An external capacit

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CXD8878Q   TRIPLE DIGITAL MIX EFFECT

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FDC8884   N-Channel Power Trench MOSFET

FDC8884 N-Channel Power Trench® MOSFET January 2012 FDC8884 N-Channel Power Trench® MOSFET 30 V, 6.5 A, 23 mΩ Features „ Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A „ Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 6.0 A „ High performance trench technology for extremely low

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FDC8886   N-Channel Power Trench MOSFET

FDC8886 N-Channel Power Trench® MOSFET January 2012 FDC8886 N-Channel Power Trench® MOSFET 30 V, 6.5 A, 23 mΩ Features „ Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A „ Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6.0 A „ High performance trench technology for extremely low

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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

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