No | Part number | Description ( Function ) | Manufacturers | |
1 | FDC8878 | N-Channel PowerTrench MOSFET FDC8878 N-Channel PowerTrench® MOSFET FDC8878 N-Channel PowerTrench® MOSFET 30 V, 8.0 A, 16 mΩ Features General Description January 2012 Max rDS(on) = 16 mΩ at VGS = 10 V, ID = 8.0 A Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 7.5 A High performance trench technology for extremely low rDS(on) Fast switching speed RoHS Compliant This N-Channel MOSFET is prod |
Fairchild Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to FDC8878 |
Part No | Description ( Function) | Manufacturers | |
AMC8878 | (AMC8878 / AMC8879) LOW NOISE 150mA LOW DROPOUT REGULATOR AMC DOC. #:AMC8878_D (LF) March 2004 ADD MICROTECH CORP. DESCRIPTION AMC8878/8879 LOW NOISE 150mA LOW DROPOUT REGULATOR FEATURES The AMC8878/8879 series is a low noise, low dropout linear regulator operating from 2.5V to 6.5V input. An external capacit |
ADD Microtech |
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BD8878FV | Output Coupling Capacitor-less Line Amplifier Output Coupling Capacitor-less Line Amplifier BD8876FV, BD8878FV Description BD8876FV, BD8878FV are output coupling capacitor-less line amplifiers. These IC have a negative voltage generator built-in and generate the negative voltage from the supply voltage. It is possible to dr |
ROHM Semiconductor |
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CXD8878Q | TRIPLE DIGITAL MIX EFFECT ********** TRIPLE DIGITAL MIX EFFECT -TOP VIEW- CXD8878Q(1/3) IL08 80 70 60 V DD (+5V) V DD (+5V) GND 51 81 50 90 GND GND 40 VDD (+5V) VDD (+5V) GND 100 31 1 10 20 30 (V DD=+5V) PIN I/O No. I 1 I 2 3 I 4 I 5 I 6 I 7 I 8 I 9 I 10 O 11 O 12 |
ETC |
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FDC8884 | N-Channel Power Trench MOSFET FDC8884 N-Channel Power Trench® MOSFET January 2012 FDC8884 N-Channel Power Trench® MOSFET 30 V, 6.5 A, 23 mΩ Features Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 6.0 A High performance trench technology for extremely low |
Fairchild Semiconductor |
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FDC8886 | N-Channel Power Trench MOSFET FDC8886 N-Channel Power Trench® MOSFET January 2012 FDC8886 N-Channel Power Trench® MOSFET 30 V, 6.5 A, 23 mΩ Features Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6.0 A High performance trench technology for extremely low |
Fairchild Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |