No | Part number | Description ( Function ) | Manufacturers | |
3 | FDB2532 | N-Channel PowerTrench MOSFET 150V/ 79A/ 16m FDB2532 / FDP2532 / FDI2532 August 2002 FDB2532 / FDP2532 / FDI2532 N-Channel PowerTrench® MOSFET 150V, 79A, 16mΩ Features • r DS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 33A • Qg(tot) = 82nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82884 Appl |
Fairchild Semiconductor |
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2 | FDB2532 | N-Channel PowerTrench MOSFET SMD Type MOSFET N-Channel PowerTrench MOSFET KDB2532(FDB2532) Features rDS(ON) = 14m (Typ.), VGS = 10V, ID = 33A Qg(tot) = 82nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27-0.1 Unit: mm +0.11.27 -0.1 +0.22.54 -0.2 15.25-+00..22 5.60 1.27+0.1 -0.1 0.1 |
Kexin |
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1 | FDB2532_F085 | N-Channel PowerTrench MOSFET FDB2532_F085 N-Channel PowerTrench® MOSFET FDB2532_F085 N-Channel PowerTrench® MOSFET 150V, 79A, 16mΩ Features • rDS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 33A • Qg(tot) = 82nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 • RoHS Compliant Formerly developmental type 82884 |
Fairchild Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |