Datasheet FCP11N60N Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FCP11N60N	N-Channel MOSFET FCP11N60N / FCPF11N60NT N-Channel MOSFET FCP11N60N / FCPF11N60NT N-Channel MOSFET 600V, 10.8A, 0.299Ω Features • RDS(on) = 0.255Ω ( Typ.)@ VGS = 10V, ID = 5.4A • Ultra Low Gate Charge ( Typ. Qg = 27.4nC) • Low Effective Output Capacitance • 100% Avalanche Tested • RoHS Compliant August	Fairchild Semiconductor

FCP11N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FCP11N60	SuperFET MOSFET FCP11N60 / FCPF11N60 — N-Channel SuperFET® MOSFET FCP11N60/FCPF11N60 March 2014 General Description SuperFET® MOSFET is Fairchild Semiconductor’s first genera-tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstandi	Fairchild Semiconductor
FCP11N60N	N-Channel MOSFET FCP11N60N / FCPF11N60NT N-Channel MOSFET FCP11N60N / FCPF11N60NT N-Channel MOSFET 600V, 10.8A, 0.299Ω Features • RDS(on) = 0.255Ω ( Typ.)@ VGS = 10V, ID = 5.4A • Ultra Low Gate Charge ( Typ. Qg = 27.4nC) • Low Effective Output Capacitance • 100% Avalanche Tested • Ro	Fairchild Semiconductor
FCP11N60F	600V N-Channel MOSFET FCP11N60F/FCPF11N60F 600V N-Channel MOSFET SuperFET FCP11N60F/FCPF11N60F 600V N-Channel MOSFET Features • 650V @TJ = 150°C • Typ. RDS(on) = 0.32Ω • Fast Recovery Type ( trr = 120ns) • Ultra Low Gate Charge (typ. Qg = 40nC) • Low Effective Output Capacitance (typ. Co	Fairchild Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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