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Datasheet FCH47N60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | FCH47N60 | N-Channel MOSFET FCH47N60 — N-Channel SuperFET® MOSFET
FCH47N60
N-Channel SuperFET® MOSFET
600 V, 47 A, 70 mΩ
Features
• 650 V @ TJ = 150°C • Typ. RDS(on) = 58 mΩ • Ultra Low Gate Charge (Typ. Qg = 210 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF) • 100% Avalanche Tested • RoH |
 Fairchild Semiconductor |
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| 3 | FCH47N60F | 600V N-Channel MOSFET FCH47N60F 600V N-Channel MOSFET
May 2006
SuperFET
FCH47N60F
600V N-Channel MOSFET
Features
• 650V @TJ = 150°C • Typ. RDS(on) = 0.062Ω • Fast Recovery Type ( trr = 240ns) • Ultra Low Gate Charge (typ. Qg = 210nC) • Low Effective Output Capacitance (typ. Cosseff. = 420pF) • 100% avalan |
Fairchild Semiconductor |
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| 2 | FCH47N60N | N-Channel MOSFET www.DataSheet.co.kr
FCH47N60N 600V N-Channel MOSFET
SupreMOS
FCH47N60N
N-Channel MOSFET
600V, 47A, 62mΩ Features
• 650V @TJ = 150 C • RDS(on) = 51.5mΩ ( Typ.)@ VGS = 10V, ID =23.5 A • Ultra Low Gate Charge ( Typ.Qg =115nC) • Low Effective Output Capacitance • 100% Avalanche Tested • |
Fairchild Semiconductor |
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| 1 | FCH47N60NF | MOSFET ( Transistor ) FCH47N60NF — N-Channel SupreMOS® FRFET® MOSFET
FCH47N60NF
N-Channel SupreMOS® FRFET® MOSFET
600 V, 45.8 A, 65 mΩ
November 2013
Features
• 650 V @ TJ = 150oC • Typ. RDS(on) = 57.5 mΩ • Ultra Low Gate Charge (Typ. Qg = 240 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 42 |
Fairchild Semiconductor |
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