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Datasheet FCH20U10 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | FCH20U10 | SBD 20A Avg.
100 Volts
SBD
FCH20U10
|  Nihon Inter Electronics | data |
FCH Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | FCH041N60E | MOSFET, Transistor FCH041N60E — N-Channel SuperFET® II Easy-Drive MOSFET
FCH041N60E
N-Channel SuperFET® II Easy-Drive MOSFET
600 V, 77 A, 41 mΩ
December 2014
Features
• 650 V @ TJ = 150°C • Typ. RDS(on) = 36 mΩ • Ultra Low Gate Charge (Typ. Qg = 285 nC) • Low Effective Output Capacitance (Typ. Coss(e  Fairchild Semiconductor mosfet | | |
| 2 | FCH041N60F | N-Channel MOSFET FCH041N60F — N-Channel SuperFET® II FRFET® MOSFET
December 2013
FCH041N60F
N-Channel SuperFET® II FRFET® MOSFET
600 V, 76 A, 41 mΩ Features
• 650 V @ TJ = 150°C • Typ. RDS(on) = 36 mΩ • Ultra Low Gate Charge (Typ. Qg = 277 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = Fairchild Semiconductor mosfet | | |
| 3 | FCH041N65F | MOSFET, Transistor FCH041N65F — N-Channel SuperFET® II FRFET® MOSFET
December 2014
FCH041N65F
N-Channel SuperFET® II FRFET® MOSFET
650 V, 76 A, 41 mΩ
Features
• 700 V @ TJ = 150°C • Typ. RDS(on) = 36 mΩ • Ultra Low Gate Charge (Typ. Qg = 226 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = Fairchild Semiconductor mosfet | | |
| 4 | FCH043N60 | MOSFET, Transistor FCH043N60 — N-Channel SuperFET® II MOSFET
April 2014
FCH043N60
N-Channel SuperFET® II MOSFET
600 V, 75 A, 43 mΩ
Features
• 650 V @ TJ = 150°C • Typ. RDS(on) = 37 mΩ • Ultra Low Gate Charge (Typ. Qg = 163 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 730 pF) • 100% Ava Fairchild Semiconductor mosfet | | |
| 5 | FCH05A10 | Schottky Barrier Diode www.DataSheet.co.kr
SBD
T y p e : FCH0 FCH05A10 A10
OUTLINE DRAWING
5A 100V Tj:150°C
FEATURES *TO-220AB Case *Fully Molded *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation
Maximum Ratings
Rating
Repetitive Peak Reverse Voltage Average Recti Nihon Inter Electronics diode | | |
| 6 | FCH06A09 | Schottky barrier Diode ６Ａ ９０Ｖ
SBD Type FCH06A09
INSTANTANEOUS FORWARD CURRENT (A)
20 10
5
2 1 0.5
0.2 0
FORWARD CURRENT VS. VOLTAGE
FCH06A09 (per Arm)
Tj=25°C Tj=150°C
0.2 0.4 0.6 0.8 1.0 INSTANTANEOUS FORWARD VOLTAGE (V)
1.2
AVERAGE FORWARD POWER DISSIPATION (W)
0° 180° θ
CONDUCTION ANGLE 6
5
4
3
2 Nihon Inter Electronics diode | | |
| 7 | FCH06A10 | Schottky barrier Diode ６Ａ １００Ｖ
SBD Type FCH06A10
INSTANTANEOUS FORWARD CURRENT (A)
20 10
5
2 1 0.5
0.2 0
FORWARD CURRENT VS. VOLTAGE
FCH06A10 (per Arm)
Tj=25°C Tj=150°C
0.2 0.4 0.6 0.8 1.0 INSTANTANEOUS FORWARD VOLTAGE (V)
1.2
AVERAGE FORWARD POWER DISSIPATION (W)
0° 180° θ
CONDUCTION ANGLE 6
5
4
Nihon Inter Electronics diode | |
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