No | Part number | Description ( Function ) | Manufacturers | |
1 | F59L1G81A | 1 Gbit (128M x 8) 3.3V NAND Flash Memory ESMT Flash FEATURES z Voltage Supply: 2.6V ~ 3.6V z Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Automatic Program and Erase - Page Program: (2K + 64) bytes - Block Erase: (128K + 4K) bytes z Page Read Operation - Page Size: (2K + 64) bytes - Random Read: 25us (Max.) - Serial Access: 25ns (Min.) z Memory Cell: 1bit/Memory Cell z Fast |
Elite Semiconductor |
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Recommended search results related to F59L1G81A |
Part No | Description ( Function) | Manufacturers | |
F59L1G81MA | 1 Gbit (128M x 8) 3.3V NAND Flash Memory ESMT Flash FEATURES z Voltage Supply: 3.3V (2.7V~3.6V) z Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte z Page Read Operation - Page Size: (2K + 64 |
Elite Semiconductor |
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