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Datasheet F59D1G81A Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | F59D1G81A | 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory ESMT
Flash
FEATURES
Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization
x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (64M + 2M) x 16bit - Data Register: (1K + 32) x 16bit Automatic Program and Erase x8: - Page Program: (2K + 64) By | Elite Semiconductor | data |
F59 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | F59D1G161A | 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory ESMT
Flash
FEATURES
Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization
x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (64M + 2M) x 16bit - Data Register: (1K + 32) x 16bit Automatic Program and Erase x8: - Page Program: (2K + 64) By Elite Semiconductor data | | |
2 | F59D1G81A | 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory ESMT
Flash
FEATURES
Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization
x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (64M + 2M) x 16bit - Data Register: (1K + 32) x 16bit Automatic Program and Erase x8: - Page Program: (2K + 64) By Elite Semiconductor data | | |
3 | F59D2G161A | 2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory ESMT
Flash
FEATURES
Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization
x8: - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (128M + 4M) x 16bit - Data Register: (1K + 32) x 16bit Automatic Program and Erase x8: - Page Program: (2K + 64) by Elite Semiconductor data | | |
4 | F59D2G81A | 2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory ESMT
Flash
FEATURES
Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization
x8: - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (128M + 4M) x 16bit - Data Register: (1K + 32) x 16bit Automatic Program and Erase x8: - Page Program: (2K + 64) by Elite Semiconductor data | | |
5 | F59D4G161A | 4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory ESMT
Flash
FEATURES
Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization
x8: - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (256M + 4M) x 16bit - Data Register: (1K + 32) x 16bit Automatic Program and Erase x8: - Page Program: (2K + 64) By Elite Semiconductor data | | |
6 | F59D4G81A | 4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory ESMT
Flash
FEATURES
Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization
x8: - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (256M + 4M) x 16bit - Data Register: (1K + 32) x 16bit Automatic Program and Erase x8: - Page Program: (2K + 64) By Elite Semiconductor data | | |
7 | F59L1G81A | 1 Gbit (128M x 8) 3.3V NAND Flash Memory ESMT
Flash
FEATURES
z Voltage Supply: 2.6V ~ 3.6V z Organization
- Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Automatic Program and Erase - Page Program: (2K + 64) bytes - Block Erase: (128K + 4K) bytes z Page Read Operation - Page Size: (2K + 64) bytes - Random Read: Elite Semiconductor data | |
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Número de pieza | Descripción | Fabricantes | |
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