No | Part number | Description ( Function ) | Manufacturers | |
1 | F2013 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performa |
Polyfet RF Devices |
0  1  2  3  4  5  6  7  8 9 |
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2SA2013 | DC/DC Converter Applications Ordering number:ENN6307A PNP/NPN Epitaxial Planar Silicon Transistors 2SA2013/2SC5566 DC/DC Converter Applications Applications · Relay drivers, lamp drivers, motor drivers, strobes. Package Dimensions unit:mm 2038A [2SA2013/2SC5566] 4.5 1.6 1.5 Features · Adoption of FBET |
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List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |