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Datasheet F1427 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | F1427 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. TM "Polyfet" process features gold metal for great |  Polyfet RF Devices | transistor |
F14 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | F1400A | Clock Oscillator
F1400A Series 9x14 mm FR-4, 5.0 Volt, Sinewave, Clock Oscillator
• Former
Product
OBSOLETE
Pin Connections
X O
95
 MTRONPTI oscillator | | |
| 2 | F1401 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly Polyfet RF Devices transistor | | |
| 3 | F1404ZS | IRF1404ZS PD - 94634B
IRF1404Z IRF1404ZS IRF1404ZL
Features
l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
G
HEXFET® Power MOSFET
D
VDSS = 40V RDS(on) = 3.7mΩ
This HEXFET® Power MOSFET utilizes the late  IRF data | | |
| 4 | F1410 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly Polyfet RF Devices transistor | | |
| 5 | F1415 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly Polyfet RF Devices transistor | | |
| 6 | F1423 | TX Differential Input RF Amplifier TX Differential Input RF Amplifier
GENERAL DESCRIPTION
The F1423 is a 600 MHz to 3000 MHz TX differential input / single-ended output RF amplifier used in transmitter applications.
The F1423 TX Amp provides 13.1 dB gain with +41.8 dBm OIP3 and 5.1 dB noise figure at 2000 MHz. This device uses a sing  Integrated Device Technology amplifier | | |
| 7 | F1427 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. TM "Polyfet" process features gold metal for great Polyfet RF Devices transistor | |
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