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F11F60CPM PDF Datasheet

The F11F60CPM is Power MOSFET ( Transistor ). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 F11F60CPM
Power MOSFET ( Transistor )

F11F60CPM PowerMOSFET ■外観図 OUTLINE Package:FTO-220A(3pin) 600V11A 特長 煙低オン抵抗 煙絶縁タイプ Feature 煙 LowRON 煙 IsolatedPackage 0000 11F60CPM Unit:mm 外形図については新電元 Webサイトをご参照下さい。捺印表示については捺 印仕様をご確認下さい。 Fordetailsoftheoutlinedimensions,refertoourweb site.

SHINDENGEN
SHINDENGEN
pdf

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Recommended search results related to F11F60CPM

Part No Description ( Function) Manufacturers PDF
F11F60C3M   Power MOSFET ( Transistor )

F11F60C3M 600V11A 特長 煙低オン抵抗 煙高速スイッチング 煙絶縁タイプ Feature 煙 LowRON 煙 FastSwitching 煙 IsolatedPackage PowerMOSFET ■外観図 OUTLINE Package:FTO-220A 0000 11F60C3M Unit:mm 外形図については新電元 Webサイトをご�

SHINDENGEN
SHINDENGEN
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2SA1160   Silicon PNP Epitaxial Type Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications 2SA1160 Unit: mm • High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120

Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf
2SA1160   Plastic-Encapsulated Transistors

Transys Electronics L I M I T E D TO-92MOD Plastic-Encapsulated Transistors TO-92MOD 1. EMITTER 2SA1160 FEATURE Power dissipation TRANSISTOR (PNP) 2. COLLECTOR 3. BASE ww.datasheet39.comom PCM : 0.9 W (Tamb=25℃) Collector current ICM: -2A Collector-base voltage V(BR)CBO: -

TRANSYS Electronics Limited
TRANSYS Electronics Limited
datasheet pdf
2SB1160   SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1160 DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1715 ·High fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifi

SavantIC
SavantIC
datasheet pdf
2SD1160   Silicon NPN Epitaxial Type TRANSISTOR

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SD1160 Switching Applications Suitable for Motor Drive Applications 2SD1160 Unit: mm • High DC current gain • Low saturation voltage: VCE (sat) = 0.6 V (max) (IC = 2A, IB = 40 mA) • Built-in free wheel diode Ab

Toshiba Semiconductor
Toshiba Semiconductor
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[1]    

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