No | Part number | Description ( Function ) | Manufacturers | |
1 | F1152NBGI | RF to IF Dual Downconverting Mixer DATASHEET RF to IF Dual Downconverting Mixer GENERAL DESCRIPTION This document describes the specifications for the IDTF1152 Zero-DistortionTM RF to IF Downconverting Mixer. This device is part of a series of mixers offered with high side or low side injection options for all UTRA bands. See the Part# Matrix for the details of all devices in this series. The F1152 dual channe |
Integrated Device Technology |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to F1152NBGI |
Part No | Description ( Function) | Manufacturers | |
MCMF0W4FF1152A50 | Metal Film Fixed Resistor Metal Film Fixed Resistor Specifications: Type Rated Power Max. Working Voltage Max. Overload Voltage Dielectric Withstanding Voltage Rated Ambient Temp Operating Temp. Range Resistance Tolerance Resistance Range : MCMF : 0.25W at 70°C : 250V : 500V : 500V : 70°C : -5 |
Multicomp |
|
2SB1152 | Silicon PNP Power Transistors INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SB1152 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation APPLICATIONS ·Designed for high power applications ABSOLU |
Inchange Semiconductor |
|
2SK1152 | Silicon N-Channel MOS FET 2SK1151(L)(S), 2SK1152(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK-1 4 4 1 |
Hitachi Semiconductor |
|
2SK1152L | Silicon N-Channel MOS FET 2SK1151(L)(S), 2SK1152(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK-1 4 4 1 |
Hitachi Semiconductor |
|
2SK1152S | Silicon N-Channel MOS FET 2SK1151(L)(S), 2SK1152(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK-1 4 4 1 |
Hitachi Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |