No | Part number | Description ( Function ) | Manufacturers | |
1 | F1063 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performa |
Polyfet RF Devices |
0  1  2  3  4  5  6  7  8 9 |
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Part No | Description ( Function) | Manufacturers | |
SF1063A | 549.00 MHz SAW Filter SF1063A • • • • • Designed for CATV Applications (Pilot Tone) Low Insertion Loss 9.1 x 7.1 mm Surface-Mount Case Unbalanced Input and Output Complies with Directive 2002/95/EC (RoHS) Pb 549.00 MHz SAW Filter Value +10 30 -40 to +85 260°C for 30 s Units dBm VDC °C A |
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1063A | Tube www.DataSheet.in www.DataSheet.in www.DataSheet.in page 1 2 3 4 1063A sheet 1 2 3 FP date 1957.02.02 1957.02.02 1957.02.02 1999.08.21 www.DataSheet.in |
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2SA1063 | Silicon POwer Transistors SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1063 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High transition frequency APPLICATIONS ·Designed for general purpose switching and amplifier applicatio |
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2SA1063 | POWER TRANSISTOR www.DataSheet4U.net Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1063 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High transition frequency APPLICATIONS ·Designed for general purpose switching and amplifier applicati |
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2SA1063 | Trans GP BJT PNP 60V 5A 3-Pin(3+Tab) TO-220AB |
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