No | Part number | Description ( Function ) | Manufacturers | |
1 | F1022 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performa |
Polyfet RF Devices |
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Part No | Description ( Function) | Manufacturers | |
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2SA1022 | Silicon PNP Epitaxial Transistor Transistor 2SA1022 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC2295 Unit: mm s Features q q 2.8 –0.3 0.65±0.15 +0.2 +0.25 1.5 –0.05 0.65±0.15 0.95 High transition frequency fT. Mini type package, allowing downsizing of the |
Panasonic Semiconductor |
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2SA1022 | Silicon NPN epitaxial planer type(For high-frequency amplification) Transistor 2SA1022 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC2295 Unit: mm s Features q q 2.8 –0.3 0.65±0.15 +0.2 +0.25 1.5 –0.05 0.65±0.15 0.95 High transition frequency fT. Mini type package, allowing downsizing of the |
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List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |