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F101 PDF Datasheet

The F101 is Diode ( Rectifier ). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
11 F101
Diode ( Rectifier )

American Microsemiconductor
American Microsemiconductor
pdf
10 F1010EL
IRF1010EL

PD - 91720 IRF1010ES IRF1010EL l l l l l l Advanced Process Technology Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated G HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 12mΩ Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing

Power MOSFET
Power MOSFET
pdf
9 F1010ES
IRF1010ES

PD - 91720 IRF1010ES IRF1010EL l l l l l l Advanced Process Technology Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated G HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 12mΩ Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing

Power MOSFET
Power MOSFET
pdf
8 F1010N
IRF1010N

PD - 91278 IRF1010N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 11mΩ G S ID = 85A‡ Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely lo

International Rectifier
International Rectifier
pdf
7 F1012
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performa

Polyfet RF Devices
Polyfet RF Devices
pdf
6 F1014
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performa

Polyfet RF Devices
Polyfet RF Devices
pdf

[1]    [2]    

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
pdf
LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
pdf

 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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