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EPC3479G-LF PDF Datasheet

The EPC3479G-LF is Flyback Transformer. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 EPC3479G-LF
Flyback Transformer

Flyback Transformer ELECTRONICS INC. EPC3479G & EPC3479G-LF Inductance (µH ± 5%) @ 100 KHz, 1.0 Vrms 9.0 Pri. DCR (mΩ Typ.) 13.5 270 2.4 Pri. Aux. Sec. • 25W PoE Applications • Bobbin : UL94V-0 Recognized Materials • Storage Temperature : -40°C to +125°C • Operating Temperature : 0°C to +70°C • Class 130ºC Insulation System • Duty Cycle : 62% Max.

PCA Electronics
PCA Electronics
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Recommended search results related to EPC3479G-LF

Part No Description ( Function) Manufacturers PDF
EPC3479G   Flyback Transformer

Flyback Transformer ELECTRONICS INC. EPC3479G & EPC3479G-LF Inductance (µH ± 5%) @ 100 KHz, 1.0 Vrms 9.0 Pri. DCR (mΩ Typ.) 13.5 270 2.4 Pri. Aux. Sec. • 25W PoE Applications • Bobbin : UL94V-0 Recognized Materials • Storage Temperature : -40°C to +125°C • O

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2N3479   Diode ( Rectifier )

American Microsemiconductor
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2SC3479   Power Transistor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3479 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Designed for high definitio

Inchange Semiconductor
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2SK3479   SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3479 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3479 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3479 2SK3479-S 2SK3479-ZJ 2SK3479-Z PACKAGE

NEC
NEC
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2SK3479   MOS Field Effect Transistor

SMD Type MOS Field Effect Transistor 2SK3479 TO-263 +0.1 1.27-0.1 MOSFET Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features Super low on-state resistance: RDS(on)1 = 11 m RDS(on)2 = 13 m MAX. (VGS = 10 V, ID = 42 A) +0.2 8.7-0.2 MAX. (VGS = 4.5 V, ID = 42 A) Low Ciss: Ciss = 110

Kexin
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