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EPC3076G-X PDF Datasheet

The EPC3076G-X is Surface Mount Power Transformer. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 EPC3076G-X
Surface Mount Power Transformer

Surface Mount Power Transformer ELECTRONICS INC. EPC3076G-X Features of the ER 11-6 Series • Low Loss Material ensures operation in High Frequency Switching Converters such as Flyback, Buck, Boost Topology or as Coupled Inductors† • Selected models can be used in Forward, Push-Pull or Half & Full Bridge Topology†† • Very Low Leakage Inductance

PCA ELECTRONICS
PCA ELECTRONICS
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2SC3076   Silicon NPN Epitaxial Type TRANSISTOR

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3076 Power Amplifier Applications Power Switching Applications 2SC3076 Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 μs (typ.) • Comple

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2SC3076   Silicon NPN Epitaxial

SMD Type Silicon NPN Epitaxial 2SC3076 TO-252 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low Collectror Saturation Voltage:VCE(sat)=0.5V(Max.)(IC=1A) Excellent Switching Time :tstg=1.0ìs(Typ.) +0.2 9.70 -0.2 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15

Kexin
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2SK3076   Silicon N Channel MOS FET High Speed Power Switching

2SK3076(L),2SK3076(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-656 (Z) 1st. Edition Jun 1998 Features • • • • Low on-resistance High speed switching Low drive current. Built-in fast recovery diode (trr=120 ns) Outline LDPAK 4 4 D 1 G 1 2 3 2 3 S

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2SK3076L   Silicon N Channel MOS FET High Speed Power Switching

2SK3076(L),2SK3076(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-656 (Z) 1st. Edition Jun 1998 Features • • • • Low on-resistance High speed switching Low drive current. Built-in fast recovery diode (trr=120 ns) Outline LDPAK 4 4 D 1 G 1 2 3 2 3 S

Hitachi Semiconductor
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2SK3076S   Silicon N Channel MOS FET High Speed Power Switching

2SK3076(L),2SK3076(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-656 (Z) 1st. Edition Jun 1998 Features • • • • Low on-resistance High speed switching Low drive current. Built-in fast recovery diode (trr=120 ns) Outline LDPAK 4 4 D 1 G 1 2 3 2 3 S

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