No | Part number | Description ( Function ) | Manufacturers | |
1 | EN29F040-55JI | 4 Megabit (512K x 8-bit) Flash Memory EN29F040 EN29F040 4 Megabit (512K x 8-bit) Flash Memory FEATURES • 5.0V operation for read/write/erase operations • Fast Read Access Time - 45ns, 55ns, 70ns, and 90ns • Sector Architecture: 8 uniform sectors of 64Kbytes each Supports full chip erase Individual sector erase supported Sector protection: Hardware locking of sectors to prevent program or erase operations wit |
ETC |
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Recommended search results related to EN29F040-55JI |
Part No | Description ( Function) | Manufacturers | |
EN29F040-55J | 4 Megabit (512K x 8-bit) Flash Memory EN29F040 EN29F040 4 Megabit (512K x 8-bit) Flash Memory FEATURES • 5.0V operation for read/write/erase operations • Fast Read Access Time - 45ns, 55ns, 70ns, and 90ns • Sector Architecture: 8 uniform sectors of 64Kbytes each Supports full chip erase Individual sector erase |
ETC |
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EN29F040-55P | 4 Megabit (512K x 8-bit) Flash Memory EN29F040 EN29F040 4 Megabit (512K x 8-bit) Flash Memory FEATURES • 5.0V operation for read/write/erase operations • Fast Read Access Time - 45ns, 55ns, 70ns, and 90ns • Sector Architecture: 8 uniform sectors of 64Kbytes each Supports full chip erase Individual sector erase |
ETC |
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EN29F040-55PI | 4 Megabit (512K x 8-bit) Flash Memory EN29F040 EN29F040 4 Megabit (512K x 8-bit) Flash Memory FEATURES • 5.0V operation for read/write/erase operations • Fast Read Access Time - 45ns, 55ns, 70ns, and 90ns • Sector Architecture: 8 uniform sectors of 64Kbytes each Supports full chip erase Individual sector erase |
ETC |
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EN29F040-55T | 4 Megabit (512K x 8-bit) Flash Memory EN29F040 EN29F040 4 Megabit (512K x 8-bit) Flash Memory FEATURES • 5.0V operation for read/write/erase operations • Fast Read Access Time - 45ns, 55ns, 70ns, and 90ns • Sector Architecture: 8 uniform sectors of 64Kbytes each Supports full chip erase Individual sector erase |
ETC |
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EN29F040-55TI | 4 Megabit (512K x 8-bit) Flash Memory EN29F040 EN29F040 4 Megabit (512K x 8-bit) Flash Memory FEATURES • 5.0V operation for read/write/erase operations • Fast Read Access Time - 45ns, 55ns, 70ns, and 90ns • Sector Architecture: 8 uniform sectors of 64Kbytes each Supports full chip erase Individual sector erase |
ETC |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |