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Datasheet EMF5 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | EMF5 | Dual Transistors JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-563 Plastic-Encapsulate Transistors
EMF5
Dual Transistors (PNP+NPN)
FEATURES z 2SA2018 and DTC144E are housed independently in a package. z Mounting possible with SOT-563 automatic mounting machines. z Transistor elements are independen |  JCET | transistor |
| 2 | EMF5 | Power management
EMF5
Transistors
Power management (dual transistors)
EMF5
2SA2018 and DTC144EE are housed independently in a EMT6 package.
!Application Power management circuit
!External dimensions (Units : mm)
!Features 1) Power switching circuit in a single package. 2) Mounting cost and a |  ROHM Semiconductor | data |
| 3 | EMF5 | General purpose transistors General purpose transistors (dual transistors)
EMF5
FEATURES z 2SA2018 and DTC144E are housed independently in a package. z Mounting possible with SOT-563 automatic mounting machines. z Transistor elements are independent, eliminating interference. z Mounting cost and area be cut in half.
Marking |  Jin Yu Semiconductor | transistor |
| 4 | EMF50A02VA | Field Effect Transistor
Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
20V
RDSON (MAX.)
45mΩ
ID 4.8A
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAM |  Excelliance MOS | transistor |
| 5 | EMF50C02VA | Field Effect Transistor
N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N‐CH P‐CH
BVDSS RDSON (MAX.)
20V ‐20V 45mΩ 100mΩ
ID
4.8A
‐3.4A
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS ( | Excelliance MOS | transistor |
EMF Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | EMF02P02H | Field Effect Transistor
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐20V
D
RDSON (MAX.)
3.2mΩ
ID
‐100A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Un Excelliance MOS transistor | | |
| 2 | EMF09P02A | Field Effect Transistor
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐20V
D
RDSON (MAX.)
9mΩ
ID
‐62A
G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
Excelliance MOS transistor | | |
| 3 | EMF09P02CS | Field Effect Transistor
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐20V
D
RDSON (MAX.)
9mΩ
ID
‐56A
G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
Excelliance MOS transistor | | |
| 4 | EMF09P02V | Field Effect Transistor
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐20V
D
RDSON (MAX.)
9.5mΩ
ID
‐20A
G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) Excelliance MOS transistor | | |
| 5 | EMF11N02J | Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
20V
D
RDSON (MAX.)
11.5mΩ
ID 8A
G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAM Excelliance MOS transistor | | |
| 6 | EMF14A02G | Field Effect Transistor
Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
20V
RDSON (MAX.)
14.8mΩ
ID 6A
UIS 100% Tested
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Excelliance MOS transistor | | |
| 7 | EMF14A02V | Field Effect Transistor
Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
20V
RDSON (MAX.)
14.8mΩ
ID 7A
UIS 100% Tested
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Excelliance MOS transistor | |
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