No | Part number | Description ( Function ) | Manufacturers | |
8 | EMD12 | Power management (dual digital transistors) EMD12 / UMD12N Transistors Power management (dual digital transistors) EMD12 / UMD12N !Features 1) Both the DTA144E and DTC144E in a EMT or UMT package. !External dimensions (Units : mm) EMD12 0.5 0.5 1.0 1.6 0.22 (4) (5) (6) (3) (2) 0.13 (3) (2) (1) R1 R2 ROHM : EMT6 Each lead has same dimensions UMD12N (4) (3) R2 (4) R1 0.2 (5) (6) 0.65 1.3 0.65 0.7 0.5 !Equ |
ROHM Semiconductor |
|
7 | EMD12 | Dual Digital Transistors JC(T JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital Transistors (Built-in Resistors) EMD12 Dual Digital Transistors (NPN+PNP) FEATURES z Both the DTC144E chip and DTA144E chip in a package. z Mounting possible with SOT-563 automatic mounting machines. z Transistor elements are independent, eliminating interference. z Mounting cost and area be cut in half. Marking: |
JCET |
|
6 | EMD12 | General purpose transistors General purpose transistors (dual transistors) FEATURES z Both the DTC144E chip and DTA144E chip in a package z Mounting possible with SOT-563 automatic mounting machines. z Transistor elements are independent, eliminating interference. z Mounting cost and area be cut in half. Marking: D12 Equivalent circuit EMD12 SOT-563 1 TR1 Absolute maximum ratings (Ta=25℃) Parameter S |
Jin Yu Semiconductor |
|
5 | EMD12N06A | Field Effect Transistor N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 12mΩ ID 48A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL EMD12N06A LIMITS U |
Excelliance MOS |
|
4 | EMD12N06H | Field Effect Transistor N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 12mΩ ID 48A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL EMD12N06H LIMITS U |
Excelliance MOS |
|
3 | EMD12N10E | Field Effect Transistor N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 11.5mΩ ID 95A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL EMD12N10E LIMITS |
Excelliance MOS |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |